Invention Grant
- Patent Title: Semiconductor structures and fabrication methods thereof
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Application No.: US16115151Application Date: 2018-08-28
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Publication No.: US10446463B2Publication Date: 2019-10-15
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , SMIC New Technology Research and Development (Shanghai) Corporation
- Applicant Address: CN Shanghai CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,SMIC New Technology Research and Development (Shanghai) Corporation
- Current Assignee Address: CN Shanghai CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201710776635 20170831
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L23/367 ; H01L23/373 ; H01L29/06 ; H01L29/78

Abstract:
A semiconductor structure includes a substrate. The substrate includes a plurality of function regions and a plurality of heat-dissipation regions. Each heat-dissipation region is adjacent to at least one function region. The semiconductor structure also includes a plurality of active fin structures, protruding from the substrate of the plurality of function regions; a plurality of channel layers, each formed on an active fin structure; and a plurality of heat-dissipation fin structures, protruding from the substrate of the plurality of heat-dissipation regions.
Public/Granted literature
- US20190067155A1 SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF Public/Granted day:2019-02-28
Information query
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