Invention Grant
- Patent Title: Semiconductor device having a copper element and method of forming a semiconductor device having a copper element
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Application No.: US15217383Application Date: 2016-07-22
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Publication No.: US10446469B2Publication Date: 2019-10-15
- Inventor: Thomas Detzel , Johann Gross , Robert Illing , Maximilian Krug , Sven Gustav Lanzerstorfer , Michael Nelhiebel , Werner Robl , Michael Rogalli , Stefan Woehlert
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/373 ; H01L23/532 ; H01L21/288 ; H01L21/48
Abstract:
A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.
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