Invention Grant
- Patent Title: Interconnect structure
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Application No.: US16170059Application Date: 2018-10-25
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Publication No.: US10446489B2Publication Date: 2019-10-15
- Inventor: Ko-Wei Lin , Hung-Miao Lin , Chun-Ling Lin , Ying-Lien Chen , Huei-Ru Tsai , Sheng-Yi Su
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201710137691 20170309
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/285 ; H01L21/768 ; H01L23/532 ; H01L23/522
Abstract:
An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
Public/Granted literature
- US20190067184A1 INTERCONNECT STRUCTURE Public/Granted day:2019-02-28
Information query
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