Invention Grant
- Patent Title: Self-forming barrier for cobalt interconnects
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Application No.: US15045729Application Date: 2016-02-17
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Publication No.: US10446496B2Publication Date: 2019-10-15
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Takeshi Nogami , Michael Rizzolo
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L23/532

Abstract:
A method for forming a conductor includes forming trenches in an insulator layer. An alloy layer is deposited in the trenches. The alloy layer includes a conductor material and a barrier material. The alloy layer is annealed to form a barrier layer on the insulator layer and to purify the alloy layer into a conductor layer, such that the barrier material in the alloy layer is driven to an interface between the alloy layer and the insulator layer.
Public/Granted literature
- US20170236749A1 SELF-FORMING BARRIER FOR COBALT INTERCONNECTS Public/Granted day:2017-08-17
Information query
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