Invention Grant
- Patent Title: Enhancement-mode/depletion-mode field-effect transistor GAN technology
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Application No.: US16001996Application Date: 2018-06-07
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Publication No.: US10446544B2Publication Date: 2019-10-15
- Inventor: Jose Jimenez , Jinqiao Xie
- Applicant: Qorvo US, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/088 ; H01L27/085 ; H01L29/417 ; H01L29/36 ; H01L29/205 ; H01L21/306 ; H01L21/8252 ; H01L21/762 ; H01L29/08 ; H01L21/02 ; H01L29/06 ; H01L29/778 ; H01L29/66 ; H01L29/12 ; H01L27/06 ; H01L29/20
Abstract:
An integrated circuit die having a substrate with a first device stack disposed upon the substrate and a second device stack spaced from the first device stack and disposed upon the substrate is disclosed. The second device stack includes a first portion of a channel layer and a threshold voltage shift layer disposed between the first portion of the channel layer and the substrate, wherein the threshold voltage shift layer is configured to set a threshold voltage that is a minimum device control voltage required to create a conducting path within the first portion of the channel layer.
Public/Granted literature
- US20180358357A1 ENHANCEMENT-MODE/DEPLETION-MODE FIELD-EFFECT TRANSISTOR GAN TECHNOLOGY Public/Granted day:2018-12-13
Information query
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