Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15884932Application Date: 2018-01-31
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Publication No.: US10446657B2Publication Date: 2019-10-15
- Inventor: Yuki Nakano , Ryota Nakamura , Katsuhisa Nagao
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Priority: JP2009-170154 20090721; JP2009-233777 20091007; JP2010-152085 20100702
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/423 ; H01L21/04 ; H01L29/04 ; H01L29/16 ; H01L29/66 ; H01L29/786 ; H01L29/167 ; H01L29/49 ; H01L29/78
Abstract:
A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.
Public/Granted literature
- US10340351B2 Semiconductor device Public/Granted day:2019-07-02
Information query
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