Invention Grant
- Patent Title: Semiconductor structures and method for fabricating the same
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Application No.: US15923134Application Date: 2018-03-16
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Publication No.: US10446677B2Publication Date: 2019-10-15
- Inventor: Francois Hebert
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/778 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L23/373 ; H01L29/20 ; H01L29/205 ; H01L21/02 ; H01L21/762 ; H01L21/84 ; H01L21/306 ; H01L21/265 ; H01L27/06 ; H01L29/10

Abstract:
A semiconductor structure is provided. The semiconductor structure includes an insulating substrate including a first region and a second region; an engineered layer surrounding the insulating substrate; a nucleation layer formed on the engineered layer; a buffer layer formed on the nucleation layer; a first epitaxial layer formed on the buffer layer; a second epitaxial layer formed on the first epitaxial layer; an isolation structure at least formed in the second epitaxial layer, the first epitaxial layer and the nucleation layer, and located between the first region and the second region; a first gate, a first source and a first drain formed on the second epitaxial layer within the first region; and a second gate, a second source, and a second drain formed on the second epitaxial layer within the second region.
Public/Granted literature
- US20190288099A1 SEMICONDUCTOR STRUCTURES AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-09-19
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