Invention Grant
- Patent Title: Microstructure enhanced absorption photosensitive devices
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Application No.: US15797821Application Date: 2017-10-30
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Publication No.: US10446700B2Publication Date: 2019-10-15
- Inventor: Shih-Yuan Wang , Shih-Ping Wang , M. Saif Islam
- Applicant: W&WSens, Devices Inc.
- Applicant Address: US CA Los Altos
- Assignee: W&Wsens Devices, Inc.
- Current Assignee: W&Wsens Devices, Inc.
- Current Assignee Address: US CA Los Altos
- Agency: Cooper & Dunham LLP
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/18 ; H01L31/0352 ; G02B1/00 ; H01L31/107 ; H01L27/144 ; H01L31/103 ; H04B10/69 ; H01L27/146 ; H01L31/028 ; H01L31/02 ; H01L31/0236 ; H01L31/09 ; H04B10/80 ; H04B10/25 ; H04B10/40

Abstract:
Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
Public/Granted literature
- US20180102442A1 MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES Public/Granted day:2018-04-12
Information query
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