Invention Grant
- Patent Title: MEMS microphone having reduced leakage current and method of manufacturing the same
-
Application No.: US15818561Application Date: 2017-11-20
-
Publication No.: US10448168B2Publication Date: 2019-10-15
- Inventor: Qiang Wang
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Beijing CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Beijing CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201611066968 20161129
- Main IPC: H04R9/08
- IPC: H04R9/08 ; B81B3/00 ; B81C1/00 ; H04R19/00 ; H04R31/00

Abstract:
A microphone includes a substrate, an opening extending through the substrate, a first electrode plate layer on the opening, a second electrode plate layer spaced apart from the first electrode plate layer, a support structure layer on the substrate including an electrode attachment portion operable to attach the second electrode plate layer and a stopper operable to block contact between the first electrode plate layer and the second electrode plate layer, a cavity delineated by the support structure layer, the first electrode plate layer, and the substrate, and a conductive material layer on the support structure layer and spaced apart from the second electrode plate layer. The microphone has a significantly lower leakage current than conventional semiconductor microphones.
Public/Granted literature
- US20180152791A1 MEMS MICROPHONE HAVING REDUCED LEAKAGE CURRENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-05-31
Information query