Invention Grant
- Patent Title: Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate
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Application No.: US15935320Application Date: 2018-03-26
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Publication No.: US10453693B2Publication Date: 2019-10-22
- Inventor: Takanori Kido , Tomohisa Kato
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-026081 20130213
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/321 ; H01L21/02 ; C30B29/36 ; C30B33/00 ; H01L29/16 ; B24B37/24
Abstract:
A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
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Information query
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