Invention Grant
- Patent Title: Substrate processing apparatus, reaction tube, semiconductor device manufacturing method, and recording medium
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Application No.: US16137879Application Date: 2018-09-21
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Publication No.: US10453735B2Publication Date: 2019-10-22
- Inventor: Yusaku Okajima , Hidenari Yoshida , Shuhei Saido , Takafumi Sasaki
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2017-184794 20170926
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/68 ; C23C16/455 ; C23C16/34 ; H01L21/687 ; C23C16/458

Abstract:
A substrate processing apparatus includes: a reaction tube including inner and outer tubes installed to surround the inner tube; a substrate holder for holding substrates in a vertical direction; gas nozzles installed in a gap between the outer and inner tubes and having supply holes from which a gas is supplied toward an inlet port of the inner tube; a gas supply system for feeding gases to the reaction tube though the gas nozzles; an outlet port formed in the inner tube to flow out the gas; a discharge port for discharging the gas; a discharge part for discharging the gas staying in the gap from the discharge port; and a controller for controlling the gas supply system to supply a precursor gas and an inert gas and for causing the discharge part to purge the gas staying in the gap with the inert gas.
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