Invention Grant
- Patent Title: Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drain
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Application No.: US15433309Application Date: 2017-02-15
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Publication No.: US10453939B2Publication Date: 2019-10-22
- Inventor: Kangguo Cheng , Ruilong Xie , Tenko Yamashita , Chun-chen Yeh
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Grant Johnson
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L29/423

Abstract:
Embodiments of the invention are directed to a vertical FET device having gate and source or drain features. The device includes a fin formed in a substrate and a source or a drain region formed in the substrate. The device further includes a trench formed in the source or the drain region and a dielectric region formed in the trench. The device further includes a gate formed along vertical sidewalls of the fin and positioned such that a space between the gate and the source or the drain region includes at least a portion of the dielectric region. In some embodiments, the device further includes a bottom spacer formed over an upper surface of the dielectric region and positioned such that the space between the gate and the source or the drain region further includes at least a portion of the bottom spacer.
Public/Granted literature
Information query
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