Invention Grant
- Patent Title: Semiconductor structure and high electron mobility transistor with a substrate having a pit, and methods for fabricating semiconductor structure
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Application No.: US16005964Application Date: 2018-06-12
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Publication No.: US10453947B1Publication Date: 2019-10-22
- Inventor: Yung-Fung Lin , Cheng-Wei Chou , Szu-Yao Chang , Cheng-Tao Chou , Hsiu-Ming Chen
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L21/324 ; H01L29/06 ; H01L21/304 ; H01L29/66
Abstract:
A semiconductor device includes a substrate, a flowable dielectric material and a GaN-based semiconductor layer. The substrate has a pit exposed from an upper surface of the substrate, the flowable dielectric material fully fills the pit, and the GaN-based semiconductor layer is disposed over the substrate and the flowable dielectric material.
Information query
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