A method for fabricating a photovoltaic device includes forming a two dimensional material on a first monocrystalline substrate. A single crystal absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first monocrystalline substrate. The single crystal absorber layer is exfoliated from the two dimensional material. The single crystal absorber layer is transferred to a second substrate, and the single crystal absorber layer is placed on a conductive layer formed on the second substrate. Additional layers are formed on the single crystal absorber layer to complete the photovoltaic device.