Invention Grant
- Patent Title: Diode devices based on superconductivity
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Application No.: US16182513Application Date: 2018-11-06
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Publication No.: US10454014B2Publication Date: 2019-10-22
- Inventor: Faraz Najafi , Syrus Ziai
- Applicant: PSIQUANTUM CORP
- Applicant Address: US CA Palo Alto
- Assignee: PSIQUANTUM CORP.
- Current Assignee: PSIQUANTUM CORP.
- Current Assignee Address: US CA Palo Alto
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H01L39/08
- IPC: H01L39/08 ; H01L39/14 ; H01L29/861 ; H01L39/24 ; H01L39/06

Abstract:
An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. The device further includes a magnet that applies a magnetic field to the loop, which produces an expulsion current in the loop that travels toward the second electrode in the first channel and toward the first electrode in the second channel. For a range of current magnitudes, when the magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.
Public/Granted literature
- US20190140157A1 DIODE DEVICES BASED ON SUPERCONDUCTIVITY Public/Granted day:2019-05-09
Information query
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