Invention Grant
- Patent Title: Solution process for fabricating high-performance organic thin-film transistors
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Application No.: US15464336Application Date: 2017-03-20
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Publication No.: US10454033B2Publication Date: 2019-10-22
- Inventor: Beng Soon Ong , Yanlian Lei
- Applicant: Hong Kong Baptist University
- Applicant Address: HK Hong Kong
- Assignee: HONG KONG BAPTIST UNIVERSITY
- Current Assignee: HONG KONG BAPTIST UNIVERSITY
- Current Assignee Address: HK Hong Kong
- Agency: Idea Intellectual Limited
- Agent Margaret A. Burke; Sam T. Yip
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C09D11/52 ; C09D11/106 ; C09D11/107 ; H01L51/05 ; B32B3/10 ; C09D11/12 ; C08G61/12 ; C09D7/65 ; C09D5/24 ; C09D11/108 ; C09D123/06 ; C09D125/06 ; C09D127/06 ; C09D133/12 ; C09D165/00 ; C09D133/20

Abstract:
The present invention relates to a solution or ink composition for fabricating high-performance thin-film transistors. The solution or ink comprises an organic semiconductor and a mediating polymer such as polyacrylonitrile, polystyrene, or the like or mixture thereof, in an organic solvent such as chlorobenzene or dichlorobenzene. The percentage ratio by weight of semiconductor:mediating polymer ranges from 5:95 to 95:5, and preferably from 20:80 to 80:20. The solution or ink is used to fabricate via solution coating or printing a semiconductor film, followed by drying and thermal annealing if necessary to provide a channel semiconductor for organic thin-film transistors (OTFTs). The resulting OTFT device with said channel semiconductor has afforded OTFT performance, particularly field-effect mobility and current on/off ratio that are superior to those OTFTs with channel semiconductors fabricated without a mediating polymer.
Public/Granted literature
- US20170200896A1 Solution Process for Fabricating High-performance Organic Thin-film Transistors Public/Granted day:2017-07-13
Information query
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