Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US15325383Application Date: 2016-02-03
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Publication No.: US10461062B2Publication Date: 2019-10-29
- Inventor: Kosuke Ikeda
- Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Ladas & Parry, LLP
- International Application: PCT/JP2016/053249 WO 20160203
- International Announcement: WO2017/134774 WO 20170810
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L21/8232 ; H01L23/02 ; H01L23/48 ; H01L25/16 ; H05K1/03 ; H01L25/07 ; H01L25/18 ; H01L23/538

Abstract:
A semiconductor device has a first board (10) having a first electrically conducting layer (11) and a first electronic element (12) that is provided on the first electrically conducting layer (11); and an intermediate layer (20) being provided on the first board (10), and having a plurality of connectors and a resin board section, in which the plurality of connectors are fixed. The connector is exposed from the resin board section on the first board (10) side, and connected with the first electrically conducting layer (11) or the first electronic element (12).
Public/Granted literature
- US20180219003A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-08-02
Information query
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