Invention Grant
- Patent Title: Image sensors, and fabrication and operation methods thereof
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Application No.: US15927594Application Date: 2018-03-21
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Publication No.: US10461113B2Publication Date: 2019-10-29
- Inventor: Guo Feng Yao , Jue Lu , Hai Fang Zhang , Xuan Jie Liu
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Samiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Samiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201710173899 20170322
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L27/146

Abstract:
An image sensor includes a substrate having a first surface and a second surface. The substrate includes a photo-sensitive region and a connection region. The image sensor also includes a buffer layer formed on the first surface of the substrate in the photo-sensitive region, and a metal grid formed on the buffer layer and including a plurality of staggered metal wires. The metal grid is connected to an operation voltage, and a plurality of trenches are formed in the metal grid with each trench surrounded by the metal wires. The image sensor further includes a plurality of color filters formed in the plurality of trenches of the metal grid. The metal grid induces charges in the substrate to prevent recombination between the charges generated by photo-sensitive components and the defects in the substrate. As such, the dark current is reduced, and the performance of the image sensor is improved.
Public/Granted literature
- US20180277586A1 IMAGE SENSORS, AND FABRICATION AND OPERATION METHODS THEREOF Public/Granted day:2018-09-27
Information query
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