Invention Grant
- Patent Title: Photodiode array
-
Application No.: US14646406Application Date: 2013-11-26
-
Publication No.: US10461115B2Publication Date: 2019-10-29
- Inventor: Tatsumi Yamanaka , Akira Sakamoto , Noburo Hosokawa
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2012-260067 20121128
- International Application: PCT/JP2013/081801 WO 20131126
- International Announcement: WO2014/084215 WO 20140605
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/10 ; H01L31/103 ; H01L31/0224 ; H01L31/10

Abstract:
A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate, a second semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate so as to surround a predetermined region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the predetermined region, and electrically connected to the second semiconductor region. The through-hole includes a portion expanded from the one surface toward the other surface.
Public/Granted literature
- US20150340402A1 PHOTODIODE ARRAY Public/Granted day:2015-11-26
Information query
IPC分类: