Invention Grant
- Patent Title: LDMOS transistor and method of forming the LDMOS transistor with improved RDS*CGD
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Application No.: US15244616Application Date: 2016-08-23
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Publication No.: US10461156B2Publication Date: 2019-10-29
- Inventor: Jun Cai
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/336 ; H01L29/08 ; H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L21/265
Abstract:
The Rds*Cgd figure of merit (FOM) of a laterally diffused metal oxide semiconductor (LDMOS) transistor is improved by forming the drain drift region with a number of dopant implants at a number of depths, and forming a step-shaped back gate region with a number of dopant implants at a number of depths to adjoin the drain drift region.
Public/Granted literature
- US20160365412A1 LDMOS TRANSISTOR AND METHOD OF FORMING THE LDMOS TRANSISTOR WITH IMPROVED RDS*CGD Public/Granted day:2016-12-15
Information query
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