Invention Grant
- Patent Title: Memory device and method for manufacturing the same
-
Application No.: US15706709Application Date: 2017-09-16
-
Publication No.: US10461246B2Publication Date: 2019-10-29
- Inventor: Chih-Wei Lu , Hsi-Wen Tien , Wei-Hao Liao , David Dai , Chung-Ju Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L43/12 ; H01L45/00 ; H01L27/22 ; H01L43/02 ; H01L27/24 ; H01L43/08

Abstract:
A method for manufacturing a memory device is provided. The method includes forming a stack over a first portion of a bottom electrode layer, in which the stack comprises a resistance switching element and a top electrode over the resistance switching element; forming a first spacer around the resistance switching element; forming a penetration barrier layer around the resistance switching element; and removing a second portion of the bottom electrode layer using an etch operation, in which the penetration barrier layer has higher resistance to penetration of an etchant used in the etch operation than that of the first spacer.
Public/Granted literature
- US20190088863A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-03-21
Information query
IPC分类: