Invention Grant
- Patent Title: Transistor device
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Application No.: US15921878Application Date: 2018-03-15
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Publication No.: US10461739B2Publication Date: 2019-10-29
- Inventor: Thomas Basler , Roman Baburske , Johannes Georg Laven , Franz-Josef Niedernostheide , Hans-Joachim Schulze
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT
- Agency: Design IP
- Priority: DE102017105712 20170316
- Main IPC: H03K17/567
- IPC: H03K17/567 ; H03K17/12 ; H03K17/687 ; H01L27/06 ; H01L29/78 ; H02H3/08 ; H01L29/739 ; H03K17/08 ; H03K17/082 ; H01L27/088 ; H01L27/07

Abstract:
Transistor devices are provided. A transistor device includes a unipolar transistor coupled between a first terminal and a second terminal; and a bipolar transistor coupled in parallel to the unipolar transistor between the first terminal and the second terminal. The bipolar transistor is configured to carry a majority of a current flowing through the transistor device when at least one of the current or a control voltage controlling the unipolar transistor and the bipolar transistor exceeds a predetermined threshold. The bipolar transistor is further configured to have a threshold voltage higher than a threshold voltage of the unipolar transistor, and a difference between the threshold voltage of the bipolar transistor and the threshold voltage of the unipolar transistor is at least 1 V.
Public/Granted literature
- US20180269871A1 TRANSISTOR DEVICE Public/Granted day:2018-09-20
Information query
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