- Patent Title: Image sensor having full well capacity beyond photodiode capacity
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Application No.: US15992484Application Date: 2018-05-30
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Publication No.: US10462402B2Publication Date: 2019-10-29
- Inventor: Xiaofeng Fan
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Farber Schreck, LLP
- Main IPC: H04N5/369
- IPC: H04N5/369 ; H04N5/335 ; H01L27/146 ; H01L27/148 ; H01L29/78 ; H04N9/04

Abstract:
A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.
Public/Granted literature
- US20180278869A1 Image Sensor Having Full Well Capacity Beyond Photodiode Capacity Public/Granted day:2018-09-27
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