Invention Grant
- Patent Title: Carbon bridged aminosilane compounds for high growth rate silicon-containing films
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Application No.: US15725122Application Date: 2017-10-04
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Publication No.: US10464953B2Publication Date: 2019-11-05
- Inventor: Meiliang Wang , Xinjian Lei , Manchao Xiao , Suresh Kalpatu Rajaraman
- Applicant: Versum Materials US, LLC
- Applicant Address: US AZ Tempe
- Assignee: VERSUM MATERIALS US, LLC
- Current Assignee: VERSUM MATERIALS US, LLC
- Current Assignee Address: US AZ Tempe
- Agent Joseph D. Rossi
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C07F7/10 ; C23C16/40 ; C23C16/44 ; C23C16/455 ; C23C16/50 ; H01L21/02
Abstract:
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor has a structure represented by Formula A: wherein R, R1, R2, R3, R4, and R5 are defined herein.
Public/Granted literature
- US20180105541A1 Carbon Bridged Aminosilane Compounds for High Growth Rate Silicon-Containing Films Public/Granted day:2018-04-19
Information query
IPC分类:
