A lithography apparatus detects a plurality of first substrate-side marks arranged with respect to a part of shot regions on which patterning is to be performed by using the first original in the lithography apparatus and detects a plurality of second substrate-side marks arranged with respect to other shot regions different from the part of the shot regions on which patterning is to be performed by using the second original different from the first original in another lithography apparatus. The lithography apparatus outputs information on detection results of the plurality of second substrate-side marks to be available in the other lithography apparatus. Then, based on detection results of the plurality of first substrate-side marks, the lithography apparatus performs patterning while performing alignment with the first original with respect to the part of the shot regions.