A storage device with a memory may optimize the setting of a read threshold or read level. A feedback mechanism may be used responsive to there being a read retry error for providing the read threshold from the read retry. Specifically, recovery from a read failure can provide feedback information for dynamically optimizing read threshold values. Read threshold adjustments may occur each time there is a successful error recovery. The read threshold adjustment scheme may select one logical page or multiple logical pages from a recovered region. If a read threshold is found to be working, this threshold may be part of a feedback message to make an informed adjustment that optimizes the read threshold of other pages.