Invention Grant
- Patent Title: Method of manufacturing semiconductor device and method of cleaning substrate
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Application No.: US15907663Application Date: 2018-02-28
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Publication No.: US10468243B2Publication Date: 2019-11-05
- Inventor: Chung-Chieh Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C11D3/22 ; C11D1/00 ; C11D3/16 ; C11D11/00 ; H01L21/67 ; C11D3/37 ; H01L21/3105 ; H01L21/266 ; H01L21/3065 ; H01L21/306 ; H01L21/311 ; H01L21/3213 ; H01L21/321
Abstract:
In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.
Public/Granted literature
- US20190157070A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SUBSTRATE Public/Granted day:2019-05-23
Information query
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