Invention Grant
- Patent Title: Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice
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Application No.: US15916766Application Date: 2018-03-09
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Publication No.: US10468245B2Publication Date: 2019-11-05
- Inventor: Keith Doran Weeks , Nyles Wynn Cody , Marek Hytha , Robert J. Mears , Robert John Stephenson
- Applicant: ATOMERA INCORPORATED
- Applicant Address: US CA Los Gatos
- Assignee: ATOMERA INCORPORATED
- Current Assignee: ATOMERA INCORPORATED
- Current Assignee Address: US CA Los Gatos
- Agency: Allen, Dyer, Doppelt + Gilchrist, P.A.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/322 ; H01L21/28 ; H01L29/20 ; H01L29/78 ; H01L29/66 ; H01L29/15 ; H01L29/06 ; H01L29/786 ; H01L29/10
Abstract:
A semiconductor device may include a substrate including a first Group IV semiconductor having a recess therein, an active layer comprising a Group III-V semiconductor within the recess, and a buffer layer between the substrate and active layer and comprising a second Group IV semiconductor. The semiconductor device may further include an impurity and point defect blocking superlattice layer adjacent the buffer layer.
Public/Granted literature
Information query
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