Invention Grant
- Patent Title: Methods of forming material layer
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Application No.: US15482005Application Date: 2017-04-07
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Publication No.: US10468256B2Publication Date: 2019-11-05
- Inventor: Sun-min Moon , Youn-soo Kim , Han-jin Lim , Yong-jae Lee , Se-hoon Oh , Hyun-jun Kim , Jin-sun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0110234 20150804
- Main IPC: C23C16/40
- IPC: C23C16/40 ; H01L21/28 ; H01L29/40 ; C23C16/04 ; C23C16/455 ; C23C16/44 ; H01L21/02 ; H01L27/108 ; H01L27/11582 ; H01L29/51 ; H01L29/78 ; H01L29/66
Abstract:
A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.
Public/Granted literature
- US20170211183A1 METHODS OF FORMING MATERIAL LAYER Public/Granted day:2017-07-27
Information query
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