Invention Grant
- Patent Title: Mechanisms for semiconductor device structure
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Application No.: US15240680Application Date: 2016-08-18
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Publication No.: US10468257B2Publication Date: 2019-11-05
- Inventor: Hsin-Ying Lin , Mei-Yun Wang , Hsien-Cheng Wang , Fu-Kai Yang , Shih-Wen Liu , Audrey Hsiao-Chiu Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/40 ; H01L21/033 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L21/768
Abstract:
Semiconductor device structures and methods for forming the same are provided. The method for forming a semiconductor device structure includes forming a dummy gate structure over a substrate and forming a dielectric layer over the substrate around the dummy gate structure. The method for forming a semiconductor device structure further includes removing the dummy gate structure and removing a portion of the dielectric layer to form a funnel shaped trench. The method for forming a semiconductor device structure further includes forming a gate structure in a bottom portion of the funnel shaped trench and filling a hard mask material in a top portion of the funnel shaped trench to form a funnel shaped hard mask structure.
Public/Granted literature
- US20160358779A1 MECHANISMS FOR SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2016-12-08
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