Invention Grant
- Patent Title: Tungsten deposition without barrier layer
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Application No.: US15961363Application Date: 2018-04-24
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Publication No.: US10468263B2Publication Date: 2019-11-05
- Inventor: Yihong Chen , Yong Wu , Chia Cheng Chin , Srinivas Gandikota
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/285
Abstract:
Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.
Public/Granted literature
- US20180247821A1 Tungsten Deposition Without Barrier Layer Public/Granted day:2018-08-30
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