Invention Grant
- Patent Title: Method of fabricating semiconductor device
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Application No.: US15613737Application Date: 2017-06-05
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Publication No.: US10468264B2Publication Date: 2019-11-05
- Inventor: Jae Soon Lim , Gyu Hee Park , Youn Joung Cho , Hyun Suk Lee , Gi Hee Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0084321 20160704; KR10-2017-0027647 20170303
- Main IPC: H01L21/30
- IPC: H01L21/30 ; C30B25/14 ; C30B29/06 ; H01L21/768 ; H01L23/29 ; H01L23/528
Abstract:
A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate.
Public/Granted literature
- US20180005836A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2018-01-04
Information query
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