Invention Grant
- Patent Title: High resistivity silicon-on-insulator structure and method of manufacture thereof
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Application No.: US15828534Application Date: 2017-12-01
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Publication No.: US10468295B2Publication Date: 2019-11-05
- Inventor: Jeffery L. Libbert , Qingmin Liu , Gang Wang , Andrew M. Jones
- Applicant: SunEdison Semiconductor Limited (UEN201334164H)
- Applicant Address: TW
- Assignee: GLOBALWAFERS CO. LTD.
- Current Assignee: GLOBALWAFERS CO. LTD.
- Current Assignee Address: TW
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/762 ; H01L21/02 ; H01L23/18 ; H01L29/51 ; H01L29/66 ; H01L21/321
Abstract:
A multilayer structure is provided, the multilayer structure comprising a semiconductor on insulator structure comprises an insulating layer that enhances the stability of the underlying charge trapping layer.
Public/Granted literature
- US20180158721A1 HIGH RESISTIVITY SILICON-ON-INSULATOR STRUCTURE AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2018-06-07
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