Invention Grant
- Patent Title: Semiconductor device with an interconnect structure and method for forming the same
-
Application No.: US15910357Application Date: 2018-03-02
-
Publication No.: US10468299B2Publication Date: 2019-11-05
- Inventor: Guo-Chiang Chi , Chia-Der Chang , Chih-Hung Lu , Wei-Chin Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; H01L29/45 ; H01L29/49 ; H01L29/06 ; H01L29/78 ; H01L21/28 ; H01L21/3213 ; H01L21/02 ; H01L21/311 ; H01L23/485 ; H01L21/283 ; H01L21/762 ; H01L29/51
Abstract:
A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.
Public/Granted literature
- US20180197775A1 SEMICONDUCTOR DEVICE WITH AN INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2018-07-12
Information query
IPC分类:
