Invention Grant
- Patent Title: FinFET structures and methods of forming the same
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Application No.: US15899185Application Date: 2018-02-19
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Publication No.: US10468308B2Publication Date: 2019-11-05
- Inventor: Chih-Han Lin , Jr-Jung Lin , Chun-Hung Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L21/8238 ; H01L29/165

Abstract:
An embodiment is a method including forming a first fin in a first region of a substrate and a second fin in a second region of the substrate, forming a first isolation region on the substrate, the first isolation region surrounding the first fin and the second fin, forming a first dummy gate over the first fin and a second dummy gate over the second fin, the first dummy gate and the second dummy gate having a same longitudinal axis, replacing the first dummy gate with a first replacement gate and the second dummy gate with a second replacement gate, forming a first recess between the first replacement gate and the second replacement gate, and a filling an insulating material in the first recess to form a second isolation region.
Public/Granted literature
- US20180174917A1 FinFET Structures and Methods of Forming the Same Public/Granted day:2018-06-21
Information query
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