Invention Grant
- Patent Title: Semiconductor power module and power conversion apparatus
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Application No.: US15790088Application Date: 2017-10-23
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Publication No.: US10468314B2Publication Date: 2019-11-05
- Inventor: Shoichi Kuga
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2017-039396 20170302
- Main IPC: H01L23/08
- IPC: H01L23/08 ; H01L21/48 ; H01L23/057 ; H01L23/13 ; H01L23/00 ; H02M7/00 ; H01L23/24 ; H01L23/31 ; H01L23/498 ; H02P27/08
Abstract:
A semiconductor power module includes: an insulating substrate including a concave portion provided on a top surface of the insulating substrate; a substrate electrode embedded in the concave portion; a semiconductor device bonded onto the substrate electrode; and an insulating resin covering a top end part of the substrate electrode.
Public/Granted literature
- US20180254228A1 SEMICONDUCTOR POWER MODULE AND POWER CONVERSION APPARATUS Public/Granted day:2018-09-06
Information query
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