A semiconductor device according to an embodiment includes a semiconductor substrate including a first face having semiconductor elements, and a second face on an opposite side to the first face. A first insulating film is located on the first face of the semiconductor substrate. A conductor is located on the first insulating film. A metal electrode is located between the first face and the second face and passes through the semiconductor substrate to be in contact with the conductor. A second insulating film is located between the metal electrode and the semiconductor substrate. A boundary face between the first insulating film and the second insulating film is located on a side of the conductor relative to the first face of the semiconductor substrate and is inclined to approach the conductor toward a center portion of the metal electrode.