Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16048284Application Date: 2018-07-29
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Publication No.: US10468338B2Publication Date: 2019-11-05
- Inventor: Hiroya Shimoyama , Hiroyuki Nakamura
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2017-180379 20170920
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/31 ; H01L23/00 ; H01L23/367 ; H05K7/20 ; H01L25/07 ; H01L23/36 ; H02M7/537

Abstract:
Performance of a semiconductor device is enhanced. A semiconductor device is a semiconductor device obtained by sealing in a sealing portion first, second, and third semiconductor chips each incorporating a power transistor for high-side switch, fourth, fifth, and sixth semiconductor chips each incorporating a power transistor for low-side switch, and a semiconductor chip incorporating a control circuit controlling these chips. The source pads of the fourth, fifth, and sixth semiconductor chips are electrically coupled to a plurality of leads LD9 and a plurality of leads LD10 via a metal plate. As viewed in a plane, the leads LD9 intersect with a side MRd4 of the sealing portion and the leads LD10 intersect with a side MRd2 of the sealing portion.
Public/Granted literature
- US20190088577A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-03-21
Information query
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