Invention Grant
- Patent Title: Heterogeneous fan-out structure and method of manufacture
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Application No.: US15875124Application Date: 2018-01-19
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Publication No.: US10468339B2Publication Date: 2019-11-05
- Inventor: Po-Hao Tsai , Po-Yao Chuang , Shin-Puu Jeng , Techi Wong
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/56 ; H01L23/00 ; H01L21/48 ; H01L25/065 ; H01L23/31 ; H01L25/00
Abstract:
A semiconductor device and method of manufacture are provided whereby an interposer and a first semiconductor device are placed onto a carrier substrate and encapsulated. The interposer comprises a first portion and conductive pillars extending away from the first portion. A redistribution layer located on a first side of the encapsulant electrically connects the conductive pillars to the first semiconductor device.
Public/Granted literature
- US20190229046A1 Heterogeneous Fan-Out Structure and Method of Manufacture Public/Granted day:2019-07-25
Information query
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