Invention Grant
- Patent Title: Semiconductor device including fully-silicided liner extending over a contact plug and insulating layer
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Application No.: US14660759Application Date: 2015-03-17
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Publication No.: US10468347B2Publication Date: 2019-11-05
- Inventor: Tomohiro Kadoya
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Priority: JP2014-081797 20140411
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/10 ; H01L23/528 ; H01L27/108
Abstract:
Disclosed herein is a device that includes a substrate, a contact plug disposed on the substrate, an interlayer dielectric over the substrate to define the contact plug, a titanium silicide extending continuously from an upper portion of the contact plug to over the interlayer dielectric, a conductive material disposed over the titanium silicide.
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Information query
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