Provided is a technique of improving joint strength between a joining layer and a resin. A power semiconductor device includes a wiring member, a semiconductor element, a joining layer joining the wiring member and the semiconductor element to each other, and a resin covering the wiring member, the semiconductor element, and the joining layer. The joining layer includes a first joining layer provided to be adjacent to the resin and having a void filled with the resin. A filler contained in the resin has a maximum width greater than a minimum diameter of the void in the first joining layer.