Invention Grant
- Patent Title: Electric circuit including a semiconductor device with a first transistor, a second transistor and a control circuit
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Application No.: US15418491Application Date: 2017-01-27
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Publication No.: US10468405B2Publication Date: 2019-11-05
- Inventor: Rainald Sander , Till Schloesser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016101676 20160129
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/78 ; H01L27/088 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H03K17/687 ; H01L27/06

Abstract:
An electric circuit includes a semiconductor device. The semiconductor device includes a first transistor and a second transistor in a common semiconductor substrate. The first transistor is of the same conductivity type as the second transistor. A first source region of the first transistor is electrically connected to a first source terminal via a first main surface of the semiconductor substrate. A second drain region of the second transistor is electrically connected to a second drain terminal via a first main surface of the semiconductor substrate. A first drain region of the first transistor and a second source region of the second transistor are electrically connected to an output terminal via a second main surface of the semiconductor substrate. The electric circuit further includes a control circuit operable to control a first gate electrode of the first transistor and a second gate electrode of the second transistor.
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Information query
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