A method of forming a fin-type field effect transistor (FinFET) according to one or more embodiments comprise etching a gate spacer of a complementary pair of transistors. An oxide is deposited over the source and drain of the transistors. A block mask is placed over the first transistor, and the oxide is removed from the second transistor. The block mask is removed and an epitaxial growth is performed on the second transistor. A selective nitridation is performed on the second transistor, and the process is repeated for the first transistor. Other embodiments are also described.