Devices and methods of forming a device are disclosed. A substrate is prepared with a memory region and a capacitor region. Split non-volatile memory (NVM) cell may be formed in the memory region and a capacitor may be formed in a capacitor region. The split NVM cell and the capacitor are formed with the same gate electrode and dielectric layers. The capacitor may be a poly-insulator-poly (PIP) which may include first and second capacitor control gate stacks or capacitor plates. In the case of capacitor control gate stacks, the capacitor is integrated into the device without the need of an additional mask. In the case of capacitor plates, the capacitor is integrated into the device with only one additional mask.