Invention Grant
- Patent Title: Hybrid thin film transistor structure, display device, and method of making the same
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Application No.: US15436073Application Date: 2017-02-17
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Publication No.: US10468434B2Publication Date: 2019-11-05
- Inventor: Kuan-feng Lee , Chandra Lius , Nai-Fang Hsu
- Applicant: INNOLUX CORPORATION
- Applicant Address: TW Miao-Li County
- Assignee: INNOLUX CORPORATION
- Current Assignee: INNOLUX CORPORATION
- Current Assignee Address: TW Miao-Li County
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02 ; H01L29/24 ; H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L29/786

Abstract:
A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.
Public/Granted literature
- US20170294456A1 HYBRID THIN FILM TRANSISTOR STRUCTURE, DISPLAY DEVICE, AND METHOD OF MAKING THE SAME Public/Granted day:2017-10-12
Information query
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