The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive charge accumulated by a photodiode; a second charge storage trench (204) doped to have the first conductivity type; and a first transfer gate (212) linking a second end (214) of the first charge storage trench (202) and the second charge storage trench (202, 204) to a sense node (216), wherein the first and second charge storage trenches are linked together by a linking channel (206) doped to have the first conductivity type and bordering a portion of an edge of the transfer gate (212).