A semiconductor image sensor includes a first substrate including a first front side and a first back side, a first interconnect structure disposed over the first front side of the first substrate, a second substrate including a second front side and a second back side, a second interconnect structure disposed over the second front side of the second substrate, a third substrate including a third front side and a third back side, and a third interconnect structure disposed over the third front side of the third substrate. The first substrate includes a plurality of first sensing devices, and the second substrate includes a plurality of second sensing devices. The second back side of the second substrate faces the first front side of the first substrate, and the second front side of the second substrate faces the third front side of the third substrate.