Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16222019Application Date: 2018-12-17
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Publication No.: US10468504B2Publication Date: 2019-11-05
- Inventor: Chih-Sheng Li , Hsin-Chieh Huang , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L29/66 ; H01L21/308 ; H01L21/31 ; H01L29/06 ; H01L29/78 ; H01L29/786 ; H01L27/108 ; H01L29/417 ; H01L27/092 ; H01L21/306 ; H01L21/8234 ; H01L21/467 ; H01L21/302 ; H01L21/8238 ; H01L21/461 ; H01L21/84 ; H01L21/465
Abstract:
A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
Public/Granted literature
- US20190140070A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2019-05-09
Information query
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