A semiconductor device includes a third electrode between a first semiconductor region and a second electrode, a fourth electrode between the first semiconductor region and the second electrode, a second semiconductor region between the first semiconductor region and the second electrode and between the third electrode and the fourth electrode, a third semiconductor region between the second semiconductor region and the second electrode, a fourth electrode between the first semiconductor region and the second electrode to be electrically connected to the second electrode, and a fifth semiconductor region between the first electrode and the first semiconductor region. A first insulating film is provided between the third electrode and the first semiconductor region, the second semiconductor region, the third semiconductor region and the second electrode. A second insulating film is provided between the fourth semiconductor region and the first semiconductor region, the second semiconductor region, and the fourth semiconductor region.