Invention Grant
- Patent Title: FinFET device with high-k metal gate stack
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Application No.: US14254035Application Date: 2014-04-16
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Publication No.: US10468528B2Publication Date: 2019-11-05
- Inventor: Kuo-Cheng Ching , Ka-Hing Fung , Chih-Sheng Chang , Zhiqiang Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/06 ; H01L29/66 ; H01L29/49 ; H01L29/51 ; H01L21/762 ; H01L21/02
Abstract:
The present disclosure provides a semiconductor device that includes a substrate, a first fin structure over the substrate. The first fin structure includes a first semiconductor material layer, having a semiconductor oxide layer as its outer layer, as a lower portion of the first fin structure. The first semiconductor has a first width. The first fin structure also includes a second semiconductor material layer as an upper portion of the first fin structure. The second semiconductor material layer has a third width, which is substantially smaller than the first width. The semiconductor structure also includes a gate region formed over a portion of the first fin and a high-k (HK)/metal gate (MG) stack on the substrate including wrapping over a portion of the first fin structure in the gate region.
Public/Granted literature
- US20150303305A1 FinFET Device with High-K Metal Gate Stack Public/Granted day:2015-10-22
Information query
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